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bv aq63 лист данных

bv aq63 лист данных

bv aq63 лист данных

30V P-Channel MOSFET

AO3401A Symbol Min Typ Max Units BV DSS-30 V VDS =-30V, V GS =0V -1 TJ=55°C -5 IGSS ±100 nA VGS(th) Gate Threshold Voltage -0.5 -0.9 -1.3 V ID(ON)-27 A 41 50 TJ=125°C 62 75 47 60 mΩ 60 85 mΩ gFS 17 S VSD-0.7 -1 V IS-2 A Ciss 645 pF Coss 80 pF Crss 55 pF Rg 4 7.8 12 Ω Qg(10V) 14 nC Qg(4.5V) 7 nC Qgs 1.5 nC Qgd 2.5 nC tD(on) 6.5 ns tr 3.5 ns tD(off) 41 ns tf 9 ns trr 11 ns Qrr 3.5 nC Advance Technical Information - Littelfusebv ces i c = 250μa, v ge = 0v 1700 v v ge(th) i c = 250μa, v ce = v ge 2.5 5.5 v i ces v ce = 0.8 • v ces, v ge = 0v 50 μa t j = 125°c 1.5 ma i ges v ce = 0v, v ge = ± 20v

CMPSH-3E ENHANCED SPECIFICATION DESCRIPTION:

BVR from 30V MIN to 40V MIN VF from 1.0V MAX to 0.8V MAX MAXIMUM RATINGS:(TA=25°C) SYMBOL UNITS Peak Repetitive Reverse Voltage VRRM 40 V Continuous Forward Current I F 200 mA Peak Repetitive Forward Voltage IFRM 350 mA Forward Surge Current, tp=10ms IFSM 750 mA Power Dissipation PD 350 mW CSD25404Q3 20 V P-Channel NexFET Power MOSFET -V GS - Gate-To-Source Voltage (V) R DS(on) - On-State Resistance (m:) 0 2 4 6 8 10 12 0 3 6 9 12 15 18 21 24 D007 T C = 25° C, I D = -10 A T C = 125° C, I D = -10 DMC67D8UFDBQ - DiodespF . Reverse Transfer Capacitance Crss — 101 — pF Notes:6. Device mounted on FR-4 substrate PCB, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PCB, 2oz copper, with 1inch square copper plate.

DMN2053UWQ - Diodes Incorporated

BV DSS R DS(ON) Max I D Max T A = +25°C 20V 56mΩ @ V GS = 4.5V 2.9A mΩ @ V GS = 2.5V 2.7A 93mΩ @ V GS = 1.8V 2.2A 140mΩ @ V GS = 1.5V 1.8A Description and Applications This MOSFET is designed to meet the stringent requirements of automotive applications. It is qualified to AEC-Q101, supported by a PPAP and is ideal for use in: Home TDK Electronics - TDK EuropeTDK Electronics (previously EPCOS) manufactures electronic components. TDK Europe is the TDK Group's European sales company for electronic components sold under the TDK and EPCOS brands. MOS TiCHNOLOOY, INC. VALLEY FORGE CORPORATE mos tichnolooy, inc. valley forge corporate center (216) 666 7950 950 rittenhouse road, norristown, pa 19401 preliminary data sheet may, 1976

PHOENIX CONTACT Feed-through terminal block - UT 2,5

Orderkey :3044076:Packing unit :1 pc:Minimum order quantity:50 pc:Catalog page:Page 149 (C-1-2019) GTIN:4017918960377:Weight per Piece (excluding packing) PHOENIX CONTACT Product list PLCnext Technology Starter kit - AXC F 2152 STARTERKIT - 1046568. AXC F 2152 starter kit including PLCnext Control AXC F 2152, voltage switch, digital input and output module, analog input and output module, potentiometer, switch module, PROFICLOUD license, as well as a power supply unit, patch cable, country-specific adapter plugs, and documentation. Save money SMDA05C.TBT Semtech Mouser Российская ФедерацияTranslate this pageSMDA05C.TBT Semtech Подавители ЭСР / диоды для подавления переходных скачков напряжения 5V, 300W, BI, 7RL лист данных, данные по товарно

ZXMP10A17E6Q - Diodes

BV DSS R DS(ON) D T A = +25°C -100V 350mΩ @ V GS = -10V -1.6A 450mΩ @ V GS = -6.0V -1.4A Description This MOSFET is designed to minimize the on-state resistance and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Applications Motor Control DC-DC Converters Показатели, подлежащие раскрытию  · Web viewЛист «Титульный». Необходимо заполнить блок данных о лицах ответственных за предоставление информации. Лист «ТС».CSD17551Q3A 30-V N-Channel NexFET™ Power MOSFETs0 2 4 6 8 10 12 14 16 18 20 22 24 26 0 2 4 6 8 10 12 V GS ­ Gate­to­ Source Voltage (V) R DS (on) ­ On­State Resistance (m W) T C = 25°C Id = 11A T C = 125ºC

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